Hot carrier analysis of submicron MOSFETs.

This paper presents an analysis of hot carrier effects in submicron MOSFETs featuring both lightly-doped (LDD) and conventional source/drain junctions. The different DC current and aging characteristics are explained via Monte Carlo device simulations which provide detailed insight into the device operating conditions and verify that the absence of appreciable gate current does not necessary lead to improved hot carrier resistance. Compared with the conventional structure, the LDD devices appear to still suffer significant aging effects particularly in transconductance degradation.