Hot Electron Transport in the AlSb/InAs/GaSb Double Heterostructure Prepared by Molecular Beam Epitaxy
01 January 1988
The epitaxial growth of AlSb/InAs/GaSb double heterostructure on GaSb substrate by molecular beam epitaxy is described. The advantage of this material system for ballistic transport electronic devices is discussed.
Hot electron transistor with two-dimensional electron gas base region is fabricated and operates at room temperature with a current gain greater than 10. Identical structure grown on GaAs substrate shows similar current gain but with much larger leakage current.