Hot electrons in modulation doped GaAs-Al GaAs heterostructures.
01 January 1984
We have investigated electric field heating of high mobility electrons in modulation-doped GaAs-Al GaAs heterostructures by simultaneous measurement of luminescence and mobility. We find that hot electrons have a Fermi-Dirac distribution function for fields up to 750 V/cm and that the high field mobility of electrons can be understood in terms of field induced electron heating and the temperature dependence of low field mobility.