Hybrid III-V/Si widely tunable laser made by wafer bonding

This paper reports on hybrid III-V on silicon lasers, integrating one III-V active waveguide and two intra-cavity ring resonators. Such lasers are fabricated using a wafer bonding technique. By heating the two resonators, we achieve a thermal wavelength tuning range of 45 nm, with side mode suppression ratio higher than 40 dB in the tuning range. The lasers can emit an optical power level around 10mW in the room temperature and have a spectral linewidth in the range 1 - 10 MHz.