III-Nitrides Micro- And Nanostructures

Nanotechnology applied to the realm of compound semiconductors can result in novel physics as well as interesting applications, particularly in the field of optoelectronics. In this chapter, we will review the current status of III-nitrides (GaN, InN, AlN, and related alloys) micro- and nanostructures. These structures can be formed either during the growth process or post-growth stage using dry or wet etching techniques. The polarity of GaN, whether Ga- or N-polar, plays a major role in the behavior of the material when subjected to a chemical etchant. Certain chemical etchants have been shown to be selective towards one polarity of GaN but not the other. This selectivity can be exploited as a means to form interesting microstructures. Examples of applications for III-nitride micro- and nanostructures will also be discussed.