Impact ionization rates for electrons and holes in Al(0.48)In (0.52)As.

The first measurement of the impact ionization rates for electrons and holes in Al(0.48)In(0.52)As is reported. Photomultiplication measurements in p-i-n avalanche photodiodes give alpha/beta ~ 2.5-3.0 in the electric field range 3.3x10(5)V/cm= F = 4.3x10(5)V/cm. This material can therefore be used to implement a potentially high performance long wavelength avalanche photodiode, designed for electron injection, with separate absorption (Ga(0.47)In(0.53)As) and multiplication (Al(0.48)In(0.52)As) regions and a high-low electric field profile (HI-LO SAM APD).