Implantation Temperature Dependence of Electrical Activation, Solubility and Diffusion of Implanted Te, Cd and Sn in GaAs
01 January 1989
The relationship between electrical activity, dopant solubility and diffusivity was investigated as a function of the substrate temperature during implantation of Te, Cd and Sn ions into GaAs. Implant doses of these species in the range 5 x 10 sup 12 - 5 x 10 sup 15 cm sup -2 were performed in the temperature range -196C to 400C, followed by either transient (950C, 5 sec) or furnace (450-900C, 20 min) annealing The redistribution after such annealing was found to depend on the implant temperature, and was always greatest for Cd followed by Sn and Te.