Implementation of Real Space Transfer Transistors in InGaAs/InAlAs and SiGe/Si Heterostructures

--Three-terminal real-space-transfer (RST) devices CHINT (charge-injection transistor) and NERFET (negative-resistance FET) have been implemented in a InGaAs/InAlAs/InGaAs heterostructure lattice matched to InP and SiGe/Si strained-layer heterostructure grown on a Si substrate. The use of non-alloyed epitaxial contacts provides an excellent ohmic contact to the InGaAs channel without compromising insulation from the second conducting layer.