Implications of the solid-phase amorphous to crystalline transformation for shallow-junction processing.
01 January 1986
Recent fundamental investigations of the solid-phase amorphous to crystalline transformation in silicon are reviewed. Three modes of inducing solid-phase regrowth are discussed, namely furnace processing, rapid-thermal processing and ion-beam processing. Specific topics which are emphasized include: extended defect states of the material; incubation solid-phase regrowth; continuous solid-phase regrowth; and the constraints which extended-defect annealing and dopant-profile broadening impose on obtaining n(+) and p(+) shallow junctions by a technology which is based on a preamorphization, dopant implant and solid- phase epitaxial regrowth sequence.