Improved MOS capacitor measurements using the Q-C method.

We describe a method for determining band bending versus gate bias, doping profile, and oxide charge density by simultaneous measurement of charge and high frequency MOS capacitance as a function of applied voltage. This charge-capacitance or Q-C method is compared with the usual MOS measurements for the same properties. We find the Q-C method is more accurate and more routine than methods presently in use.