Improved SOS by Rapid Thermal Anneal and Solid Phase Epitaxial Regrowth
03 October 1988
CMOS circuits made from conventional SOS material frequently suffer from high bulk and back channel leakage. In this investigation an attempt was made to improve the quality of the bulk material by a combination of rapid thermal annealing (RTA) and solid phase epitaxial regrowth (SPEAR). The baseline, the RTA, and the RTA/SPEAR SOS layers were examined for Al re-distribution by SIMS and spreading resistance measurements.