Improvement of Field-Effect Transistors by Employment of the Delta-Doping Technique

It is desirable to generate spatially strongly confined dopant distributions. Such dopant distributions can be mathematically described by the Dirac-delta function. Under which crystal growth conditions can such doping distributions be achieved and are diffusion and segregation of impurities significant? It is shown that capacitance measurements provide a very sensitive technique to determine diffusion and segregation of dopants on the length scale of the lattice constant. The technique is employed to show that low growth temperatures are required to minimize diffusion and segregation.