Impurity Redistribution and Junction Formation in Silicon by Thermal Oxidation

934 TIIE BELL SYSTEM TECHNICAL JOURNAL, JULY 19G0 INITIAL ^-SEMICONDUCTOR 'Jr SURFACE INITIAL DOPING LEVEL REDISTRIBUTED IMPURITY REACTED SEMICONDUCTOR PILE-UP- k i - G R O W N FILM DEPLETION k>1 x SEMICONDUCTOR-FILM INTERFACE Fig. 1 -- Schematic diagram of the redistribution of an impurity, originally uniformly distributed, produced by thermal oxidation of semiconductor surface.