In-Situ As and B Doping of Si and Si-Ge Epitaxial Films Grown by Rapid Thermal Chemical Vapor Deposition

Rapid thermal chemical vapor deposition (RTCVD) is a film growth technique that combines rapid thermal heating lamps with a chemical vapor deposition chamber. RTCVD shows great promise as a technique for depositing thin heterostructural layers for the growth of advanced device structures such as Si-Ge base heterojunction bi-polar transistors (HJBT).