In Situ Characterization of Organometallic Growth of ZnSe Using Grazing Incidence X-ray Scattering

Organometallic vapor phase epitaxy (OMVPE) of semiconductor materials has become an important tool for the production of high quality epitaxial films. However, because of the lack of analytical tools comparable to RHEED or Auger electron spectroscopy, which have proven so useful as diagnostics in MBE growth, little is known about the vapor phase or the surface processes responsible for growth.