In-situ Determination of Growth Rate by Pyrometric Interferometry during Molecular Beam Epitaxy: Application to the growth of AlGaN/GaN Quantum Wells

In this article, we report on the application of pyrimetric interferometry (PI) to monitor the growth rate of (Al)GaN in-situ during molecular beam epitaxy. Since the growth rate of III-nitrides is very sensitive to the nitrogen flux, it is important to monitor the variation in growth rate from run to run. Using this method, we grew GaN/Al sub x Ga sub (1-x) N quantum well structures with well thicknesses between 10 to 40angstroms. The thicknesses of the quantum wells were confirmed by cross-sectional transmission electron microscopy measurements and found to be in good agreement with the corresponding growth rate determined in-situ during the growth process.