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    In-Situ Epitaxial Growth of Y Sub 1 Ba Sub 2 Cu Sub 3 O Sub 7-x Films By Molecular Beam Epitaxy With An Activated Oxygen Source

In-Situ Epitaxial Growth of Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source

20 March 1989

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We report in-situ low temperature (550-600C) growth of Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x films using a combination of MBE and a reactive oxygen source generated from a microwave discharge in a flow-tube design. The activated oxygen species are predominantly excited molecular oxygen and atomic oxygen. 

X-ray diffraction and ion channeling demonstrated a high degree of epitaxial order of (001) oriented Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x films grown on MgO(100). In-situ reflection high energy electron diffraction (RHEED) indicated that a layer-by-layer growth maintained a well ordered perovskite oxide structure to the uppermost surface.