In Situ Monitoring of III-V Compound Semiconductor Photoluminescence During Plasma Processing
23 October 1989
Surface and sub-surface damage is widely recognized as a deleterious side effect of plasma processing. Therefore, real-time, in situ monitoring of damage is necessary for developing optimal plasma processes and for understanding the effects that operating variables such as power, pressure, flow-rate, and gas composition have on surface properties. Photoluminescence (PL) from III-V compound semiconductors is highly correlated with surface damage. For example, increases in the densities of recombining and trapping states as well as increased band bending can diminish the PL yield. We report in situ monitoring of PL from AlGaAs and GaAs during plasma etching and passivation.