In-Situ TEAM Study of the Annealing of CVD a-Si:H

Using transmission electron diffraction and imaging we have studied the structure of a-Si:H at room temperature and during in-situ annealing. The kinetics of crystal nucleation are examined as a function or preparation conditions. SIMS was used to determine hydrogen content as a function of annealing temperature. The interpretation of quantitative statistical data from images and diffraction patterns is greatly facilitated by comparing results from the same area of film as a function of temperature. These results will be compared with data from an in-situ annealing study of a-Si deposited within a UHV TEM.