In-Situ Transmission Electron Microscopy of the Growth of Epitaxial Metal Silicides by MBE
18 May 1988
The epitaxial metallic silicides NiSi sub 2 and CoSi sub 2 on Si present films and interfaces of the highest crystalline quality with unique physical properties. After reviewing the structure of these films studied by conventional and high-resolution transmission electron microscopy (TEM), I will explain the motivation for in-situ studies to reveal the perplexing growth mechanisms.