InAlN/GaN heterostructures for microwave power and beyond

InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing. It enables operation at extremely high temperature once problems with contact metallization and passivation have been solved. It is the only heterostructure known presently, which allows overgrowth of high quality diamond films to combine two of the most stable semiconductors. Thus, applications reach from high power microwaves systems and high temperature electronics to sensing in harsh environment.