Increased Bi-content and growth-induced anisotropy in BiYIG grown from V2O5-modified flux.
01 January 1987
A systematic study was undertaken to determine the effects of increasing V2O5 content in a Bi-containing melt on the epitaxial growth and properties of (Y(2.0-x)Bi(x)Gd1Ho2Ca7) (Fe(4.3)Si4Ge3)O12. The growth rate was found to pass through a maximum between 5 and 7M% V2O5. The incorporation of Ca, Si and Ge decreased regularly with increasing V2O5 content while that of Bi increased regularly and without saturation between 3 and 9M% V2O5.