Influence of Oxygen and Boron on Defect Production in Irradiated Silicon.

Introduction rates of dominant defects have been determined for electron-irradiated, p-type silicon as a function of oxygen and boron concentration. Samples included those with oxygen content ranging from 8 x 10 sup (15) to 7 x 10 sup (17) cm sup (-3). Initial results are described for samples with measured carbon content varying from 2 x 10 sup (15) to 6 x 10 sup (16) cm sup (-3). Competing defect reactions involving the interstitial defects, B sub i and C sub i, and oxygen, boron, and carbon are observed. The identities of an electron trap (B sub i - O sub i) and a hole trap (B sub i - B sub s) have been clarified.