Influence of Strain in Epitaxial Monlayer Structures: Si/Ge and Si/SiO sub 2 Systems

Straine due to lattice mismatch at the semiconductor interfaces often plays an important role in determining both the thin film growth mechanism as well as the material electronic structure and physical properties. This talk will focus on the strain dependence of the optical properties and in particular on on the new, structurally induced optical transitions in ultr-thin SI-Ge superlattices grown by molecular beam epitaxy.