InGaAs/InP Multiple Quantum Well Tunable Bragg Reflector.
01 January 1991
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers. We obtain a differential change in transmission of 14% at 1570 nm wavelength for an applied field of 2.25 times 10 sup 4 V/cm. We find good agreement between the experimental results and transmission spectra calculated using the optical transmission matrix method.