InGaAsP (1.3micron) grown by liquid phase epitaxy in the V- groove of a channeled InP substrate - A photoluminescence study.

The photoluminescence characteristics of a 1.3micron not intentionally doped n-type InGaAsP grown lattice matched by liquid phase epitaxy in the V-grooves of a channeled InP substrate are compared with that grown over a planar substrate. In the 5.5K photoluminescence spectrum, for both types of growth the epitaxial layer exhibits two well defined and sharp (FWHM ~7-8 meV) bands at 1.016 eV and 0.99 eV. Both peaks are assigned to band edge luminescence arising from two different compositions in the epi layer, the 0.99 eV peak arising solely from a transient growth region present near the substrate - epi interface. The only difference between V-groove and planar growth is that the transient growth region is enhanced in the V-channels perhaps due to additional perturbations associated with growth on non-planar substrates.