InGaAsP dual wavelength laser.

The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3microns and 1.55microns are described. The lasers are of the etched mesa buried heterostructure type and utilize semi-insulating InP layers both for lateral optical confinement and current confinement. The 1.55micron emission is at a single wavelength by virtue of the frequency selective feedback provided by a grating etched on the substrate. The lasers have threshold currents in the 20 to 40 mA range and have quantum efficiencies comparable to single emitter lasers.