Interfacial Structure of Highly Perfect InGaAs/InP Superlattices Grown by Gas Source MBE
08 May 1989
High-resolution x-ray diffraction studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices grown by gas-source molecular-beam epitaxy (GSMBE). This growth technique allows for excellent control of layer thickness, composition and lattice match, resulting in highly perfect superlattices with very thin InGaAs wells, sharp interfaces, sharp PL and absorption peaks and defect-free TEM.