Intrinsic gettering of shallow P-N junctions by oxygen precipitates in Czochralski-grown silicon.

Intrinsic gettering (IG) by oxygen precipitates in Czochralski- grown silicon has been evaluated over a wide range of initial interstitial oxygen concentration 15 22 ppma, but leakage reduction among the worst diodes is achieved at the expense of a two of three-fold increase in median leakage.