Inversion layers on Germanium with low-temperature-deposited Aluminum-Phosphorus Oxide dielectric films.

Mixed aluminum-phosphorus oxide films deposited on Ge(100) under ultra-high vacuum conditions at low temperatures (~~200C) are found to yield low interface state densities near the band edges which are sufficient for observing both p-and n-channel type inversion layers. As a glass-promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/Ge0 (2) interfaces.