Junction leakage studies in rapid thermal annealed diodes.
01 January 1984
A detailed and comprehensive study of As-implanted Si annealed using incoherent tungsten radiation has been performed. The study emphasizes the leakage current results, correlating them with the junction depths obtained from Rutherford backscattering measurements, and the residual damage observed in transmission electron microscopy. Sheet resistance measurements, as well as comparisons with wafers annealed in conventional furnaces are also made. It was found that higher temperatures and shorter times resulted in lower leakage currents for given junction depths.