Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs
01 January 2003
The design of a coplanar low-noise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27 - 31 GHz frequency band with a 20 dB power gain.