Kinetic Study of the Hydrogen Lateral Diffusion at High Temperature in a Directly-Bonded InP-SiO2/Si substrate
27 March 2020
In this work, we study the void formation at the bonding interface of a directly-bonded InP layer on a thermally-oxidized Si substrate (InP-SiO2/Si) under high-temperature annealing. This phenomenon is explained by a weakening of the bonding interface while high pressurized hydrogen is present. The reduction of the hydrogen partial pressure is a path to prevent void formation. A kinetic study of the hydrogen lateral diffusion and the fabrication process of outgassing trenches in the bonded seed is further explained in this article.
