Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-Ga(x)Al(1-x)As MBE interfaces.

The kinetics of implantation enhanced interdiffusion at GaAs- Ga(x)Al(1-x)As interfaces is investigated by cathodoluminescence and transmission electron microscopy. Localized Ga(+) implantation leads to enhancement of the interdiffusion by two orders of magnitude at 950C. A complete recovery of the optical quality of the material and local alteration of the bandgap is observed after Rapid Thermal Annealing. The role of intrinsic interdiffusion is identified. Control of the interdiffusion kinetics has allowed the fabrication of ultra-small structures with good optical properties.