Laser-assisted metal-organic molecular beam epitaxy of GaAs.
13 July 1987
We report preliminary studies of the growth of homoepitaxial GaAs by laser-assisted metal-organic molecular beam epitaxy, using triethyl gallium and As sub 4 sources and a 193 nm ArF excimer laser. Laser irradiation results in a large, selective- area growth rate at temperatures below 450C, where pyrolytic growth is very slow. The process is extremely efficient, with roughly unit efficiency for impinging TEGa molecules sticking and being disassociated by laser radiation to form GaAs. From the strong dependence on laser fluence, the growth enhancement process appears to be pyrolytic in nature (due to rapid transient heating by the pulsed laser), and not photolytic.