Laser-modified molecular-beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F sub 2 /GaAs substrates.
13 July 1987
We report preliminary results on the effect of 193 nm ArF excimer laser irradiation on molecular-beam epitaxial growth of (Al)GaAs on GaAs (100) substrates and of GaAs on lattice- matched (Ca,Sr)F sub 2 /GaAs (100) heterostructures. For low- temperature growth on GaAs substrates, regions exposed to the laser show enhanced photoluminescence (PL) intensities and excellent channeling as determined by Rutherford backscattering spectroscopy (RBS), whereas regions outside the laser beam show very weak PL and in some cases poor channeling in RBS. Laser irradiation also removes the native oxide on GaAs at a temperature slightly lower than is required for complete oxide desorption, thus providing an ordered surface for subsequent low-temperature epitaxial growth.