Lateral Diffusion Studies by Laser Ablation Microprobe Mass Spectrometry

Laser Ablation Microprobe Mass Spectrometry (LAMMS) was applied to the characterization of lateral diffusion problems requiring high spatial resolution and high dopant sensitivity. The high resolution and sensitivity of LAMMS provides a good analytical basis to study trace impurity migration or dopant diffusion in semiconductor and lightwave devices. LAMMS was applied to study the lateral diffusion of dopants in non-insulating Ta and Co silicide test structures and insulating optical fibers.