Lateral solid phase epitaxy of silicon on SiO2 in a silicon molecular beam epitaxy system.

Results are presented on room temperature deposition of silicon upon a silicon wafer with a range of oxide patterns. During deposition, a 4 KeV arsenic ion beam produced a doping concentration of the order of 10(20)/ cm(3). Both defect-etching and cross- sectional transmission electron microscopy show that a post- deposition thermal anneal of the deposited amorphous silicon results in approximately two microns of lateral regrowth of defective single crystal silicon above the oxide patterns.