Lattice mismatch generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy.
01 January 1989
We report a detailed transmission electron microscopy and x- ray double crystal diffractometry study of the lattice mismatch induced defect structures in InP grown on (100) GaAs substrate and vice versa by chemical beam epitaxy. A rough estimate of the dislocation densities in GaAs on InP are 2 x 10 sup 10 cm sup (-2) at the interface and 5 x 10 sup 7 cm sup (-2) at the surface of the epilayer. The corresponding values in InP on GaAs is slightly lower as expected for the compressive stress state for InP. The majority of the dislocations lie on the {111} slip planes with 1/2 {110} and 1/2 {101} types Burgers vectors.