Leakage Current and Current Distribution Investigation in High Voltage (320V) In tegrated Circuits Using Fluorescent Microthermography

The leakage current and the current distribution of high voltage (320V) integrated circuits have been studied with a fundamentally new hot spot detection technique of fluorescent microthermography. The temperature and thus the current distribution of an SCR is found to be design sensitive. The origin of the leakage current of the IC has been identified and is correlated with particular silicon defects at specific locations.