Leakage Current and Current Distribution Investigation in High Voltage (320V) Integrated Circuits Using Fluorescent Microthermography.

The leakage current and the current distribution of high voltage (320V) integrated circuits have been studied with a fundamentally new hot spot detection technique of fluorescent microthermography. The temperature and thus the current distribution of a thyristor has been determined. The origin of the leakage current of the IC has been identified and correlated with particular silicon defects at specific locations. The breakdown of the gate oxide in the DMOS has also been determined. Part of the material in this paper was delivered at the "International Symposium on the Physical and Failure Analysis of Integrated Circuits" meeting; Singapore in October 1987 and is to appear in the Proceedings of the Symposium.