Line-Narrowed 1.55micron VPT-DFB Lasers Using Vertically Self- Aligned Si-Si02 ARROW Cavities.

We report the first demonstration of a compact all-planar-technology external-cavity line-narrowed DFB semiconductor laser. MHz level linewidths have been obtained from 1.55micron VPT-DFB lasers using a silicon "optical table" heat sink and a vertically self-aligned external resonator consisting of a novel Si-Si02 waveguide with a high reflecting rear facet.