Liquid phase epitaxial growth of buried heterostructure devices.
01 January 1987
The {111} sub In plane of InP is shown to be the most difficult surface to obtain a defect free radiative interface by LPE regrowth. Studies of regrowth on this plane are described and it is shown that successful, defect free epitaxy depends upon substrate cleaning procedures, the elimination of furnace contaminants, the correct P overpressure to prevent erosion during the heat-treatment prior to epitaxy and initiation of growth with a super cooled In sub 1-x Sn sub x or quaternary melt.