Liquid phase epitaxial growth of InGaAsP and InP on mesa patterned InP substrates.

Liquid phase epitaxial growth has been performed on substrates into which mesas, 4-6 micron deep, have been etched. The mesas are oriented along the [011] direction. It is found that InP grows over mesas with little sign of preferred orientation. The growth is instead dominated by the tendency to fill on concave structures on substrates.