Liquid phase growth of epitaxial Ni and Co silicides by pulsed laser irradiation.

Epitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or di-silicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.