Local structure of S impurities in GaAs.
01 January 1986
The local structure of S implanted in GaAs has been determined by Extended X-ray Absorption Fine Structure (EXAFS) measured by monitoring the S(K(a)) Fluorescence Yield. The method showed a sensitivity of 5x10(17) atoms/cm(3). A significantly larger width and shorter mean distance is found for the S first-shell EXAFS pair-correlation function as compared to GaAs, while no difference is observed for the S second and third shells. This indicates two S site configurations of approximately equal population: (1) substitutional S on an As site and (2) a complex formed by S on an As site and an As vacancy on the second shell. This complex is characterized by a S-first neighbor distance relaxation of 0.14 +-0.04angstroms.