Localization in Superlattices
01 January 1990
Localization and Coulomb interactions effects have been observed in GaAs:Si layers interspersed with GaAs. The material is shown to have some advantages over bulk doped crystals because of an enhanced scattering rate. The variation of the conductivity with length scale is larger than predicted by an extension of existing theories to lengths of the order of the elastic mean free path.