Localization of impurities in delta-doped n-typed GaAs.
01 January 1988
Capacitance-voltage (CV) profiling measurements on delta-doped n-type GaAs reveal extremely narrow peaks of 40angstroms. Comparison of experimental with fully self-consistently calculated CV-profiles demonstrates that Si-impurities are localized on a length scale of a lattice constant in delta-doped GaAs. Diffusion and segregation are of minor importance. The basic theory of CV-measurements on quantum-mechanical systems such as delta-doped semiconductors is developed and presented.