Localized Quantum Well Excitons in the High Magnetic Field Limit.

01 January 1988

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We have studied the optical properties of the quasi-two-dimensional ground state exciton in GaAs-AlGaAs quantum wells in transverse magnetic fields for which the cyclotron energy is comparable to the zero-field excitonic binding energy. Low temperature effects on exciton localization, oscillator strength and binding energy are revealed by luminescence excitation and resonant Raman spectroscopy.