Low dark current, low voltage 1.3-1.6micron avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions (HI-LO SAM APD) by molecular beam epitaxy.
01 January 1984
The operation of the recently disclosed heterojunction avalanche photodiode with high-low electric field profile and separate absorption and multiplication regions (HI-LO SAM APD) is demonstrated. This new structure which features a doping spike in the wide gap layer offers several advantages over conventional SAM APD's (lower dark current and excess noise factor, greater gain stability).